Triode/MOS tube/transistor/module

NPN, Vceo=400V, Ic=12A

PNP, Vceo=-45V, Ic=-100mA, hfe=420~800

NPN,Vceo=50V,hfe=80

Type N VDSS(V) 50 ID@TC=69?C(A) 0.3 PD@TC=69?C(W) 0.35 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.49V 3000

MOS field effect tube

Semiconductor transistor field effect transistor MOS tube, TO-252, N channel, withstand voltage: 30V, current: 150A, 10V internal resistance (Max): 0.003Ω, 4.5V internal resistance (Max): 0.0067Ω, power: 130W