Triode/MOS tube/transistor/module

MOSFET N-channel, VDSS withstand voltage 650V, ID current 4A, RDON on-resistance 2.7R@VGS 10V(MAX), VGS(th) turn-on voltage 2.0-4.0V

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 2A Power (Pd): 1W On-Resistance (RDS(on)@Vgs,Id): 200mΩ@4.5V, 2A Threshold Voltage (Vgs(th)@Id): 1.2V@250uA

N-channel 60V 85A

Type DNPN IC(A) 0.6 VCBO(V) 75 VCEO(V) 40 VEBO(V) 6 VCE(sat)(V) 1

NPN 400V 300mA