Triode/MOS tube/transistor/module
Ultra high voltage MOS tube
説明
TECH PUBLIC (Taizhou)
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Compliant with VTH: 3.0 standard STD10PF06
説明
NCE (Wuxi New Clean Energy)
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ST (STMicroelectronics)
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HXY MOSFET (Huaxuanyang Electronics)
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Ruichips (Ruijun Semiconductor)
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Ultra high voltage MOS tube
説明
NCE (Wuxi New Clean Energy)
メーカー
The seven NPN Darlington junction transistors in these arrays are ideal for driving lamps, relays or printing hammers in a variety of industrial and consumer applications. Its high breakdown voltage and internal suppression diodes ensure that inductive loads will not be a problem. The peak inrush current of up to 500 mA enables it to drive incandescent lamps. The ULx2003A with a 2.7 kΩ series input resistor is suitable for systems using 5.0 V TTL or CMOS logic.
説明
Type N VDS(V) 30V VGS(V) ±20V Vth(V) 1.5V RDS(ON)(mΩ) 5.5mΩ ID(A) 100A
説明