Triode/MOS tube/transistor/module

Compliant with VTH: 3.0 standard STD15P6F6AG

This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.

This P-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

N-channel, 20V, 0.2A, 2.2Ω@4.5V

This dual NPN PNP bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-563 encapsulation and is suitable for low power surface mount applications.

N+N channel, 60V, 7A, 28mΩ@10V

N-channel, 150V, 3.7A, 85mΩ@10V

NPN, 400V, 300mA