Triode/MOS tube/transistor/module

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YJS15G10A-F2-1100HF

Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 60V, ID current 30A, RDON on-resistance 25mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

PNP, Vceo=60V, Ic=1A

N-channel, 30V, 30A

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a monolithic bias network consisting of a single transistor and two resistors. Series base resistor and base resistor. The BRT eliminates the need for these separate components, which are integrated into a single device. Using BRT can reduce system cost and save board space.