Triode/MOS tube/transistor/module

P-channel, -55V, -12A, 175mΩ@-10V

MOS, TO-252, N-channel, 40V, 120A, 3mΩ (Max), 150W

Type PNP IC(A) -0.5 VCBO(V) -40 VCEO(V) -25 VEBO(V) -5 VCE(sat)(V) -0.6

P-channel, 30V, 15A, 12 milliohms.

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

N-channel, 24V, 195A, 1.5mΩ@10V