Triode/MOS tube/transistor/module

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): -45V Collector current (Ic): -100mA Power (Pd): 200mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 300mV@100mA HFE: 300-400

PNP, Vceo=-45V, Ic=-0.1A, hfe=125~250, silk screen 3E

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N-channel, 60V, 30A, 40mΩ@10V

NPN

Type N VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS61°C(A) 8.5 RDS(Max) 35 PD61°C(W) 2.8

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N-channel, 60V, 0.35A, 1.8Ω@10V