Triode/MOS tube/transistor/module
ST (STMicroelectronics)
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Cmos (Guangdong Field Effect Semiconductor)
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MOS, TO-220, N-channel, 600V, 18A, 450mΩ (Max), 300W
説明
Type P VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS82°C(A) 5 RDS(Max) 80 PD82°C(W) 2.8
説明
DIODES (US and Taiwan)
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Dual N-channel.20V.9.7A.7mΩ
説明
JSMSEMI (Jiesheng Micro)
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MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.3/0.65/1.0 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 50
説明
The FNB34060T is a Motion SPM 3 module that provides a full-featured, high-performance inverter output stage for AC direct-sensing, BLDC, and PMSM motors. The modules integrate optimized gate drive for the built-in IGBTs to minimize EMI and losses, while also providing several on-module protection features including undervoltage lockout, overcurrent shutdown, high temperature monitoring of the driver IC, and fault reporting. Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are provided for each phase to support the widest range of control algorithms.
説明
ST (STMicroelectronics)
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ST (STMicroelectronics)
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TECH PUBLIC (Taizhou)
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