Triode/MOS tube/transistor/module

N channel

N-channel, 40V, 32A, 8.5mΩ@10V

UItraFET devices combine features to deliver benchmark energy efficiency in power conversion applications. These devices are optimized for rDS(on), low ESR, low total charge and Miller gate charge for high frequency DC/DC converters.

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is especially suited for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 28A Power (Pd): 40W On-Resistance (RDS(on)@Vgs,Id): 9.7mΩ @10V,15A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 16nC@10V Input Capacitance (Ciss@Vds): 0.85nF@15V ,Vds=30V Id=28A Rds=9.7mΩ, working temperature: -55℃~+150℃@(Tj) DFN5*6;

NPN

N-channel 30V 24A