Triode/MOS tube/transistor/module
CJ (Jiangsu Changdian/Changjing)
メーカー
NPN, Vceo=30V, Ic=5A, hfe=340~600
説明
P-Channel, PowerTrench MOSFET, -40 V, -110 A, 2.6 mΩ
説明
SINO-IC (Coslight Core)
メーカー
ST (STMicroelectronics)
メーカー
UMW (Friends Taiwan Semiconductor)
メーカー
TI (Texas Instruments)
メーカー
30V, N-Channel NexFET MOSFET™, Single SON5x6, 5.9mΩ 8-VSONP -55 to 150
説明
The MJ21193 and MJ21194 use perforated emitter technology and are designed for high power audio output, head positioner and linear applications.
説明
N-channel, 30V, 5A, 32mΩ@10V
説明
Leiditech (Lei Mao Electronics)
メーカー
CRMICRO (China Resources Micro)
メーカー
TWGMC (Taiwan Dijia)
メーカー
?Transistor type: NPN collector-emitter breakdown voltage (Vceo): 25V collector current (Ic): 1.5A power (Pd): 200mW collector cut-off current (Icbo): 100nA
説明