Triode/MOS tube/transistor/module

Transistor type: 1 NPN, 1 PNP Collector-emitter breakdown voltage (Vceo): 65V Collector current (Ic): 100mA Power (Pd): 200mW Collector cut-off current (Icbo): 15nA Collector-emitter saturation Voltage (VCE(sat)@Ic,Ib): 600mV@100mA, 5mA; 650mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 200@2mA, 5V;

PNP, Vceo=-140V, Ic=-4A

Type: Dual N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 8A Power (Pd): 3.8W On-Resistance (RDS(on)@Vgs,Id: 16mΩ@10V, 6A Threshold Voltage (Vgs(th)@Id): 1.6A@250uA Gate charge (Qg@Vgs): 8.6nC@10V Input capacitance (Ciss@Vds): 0.333nF@10V, Vds=30v Id=8A Rds=17mΩ, work Temperature: -55℃~+150℃@(Tj) PDFN3*3encapsulation;

Darlington Transistor Array High Voltage, High Current Darlington Transistor Array

Commercial power MOSFETs for compact and efficient designs with 5x6mm flat lead encapsulation and high thermal performance.

N-channel, 150V, 99A, 12.1mΩ@10V