Triode/MOS tube/transistor/module

PNP

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 150mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 300mV@100mA HFE: 300-400

The NCV8403 is a three-terminal protected low-side smart discrete device. Protection features include overcurrent, high temperature, ESD, and integrated drain-gate clamps for overvoltage protection. The device provides protection for harsh automotive environments.

N-channel 30V

NMOS 60V 115mA RDS(on)=7.5Ω SOT-523

Transistor type: 1 NPN-pre-biased Power (Pd): 200mW Minimum input voltage (VI(on)@Ic/Io,Vce/Vo): 3V@20mA, 0.3V Maximum input voltage (VI(off)@Ic /Io,Vce/Vcc): 500mV@100uA, 5V Output voltage (VO(on)@Io/Ii): 300mV@10mA, 0.5mA DC current gain (hFE@Ic,Vce): 20@10mA, 5V Input resistance 4.7KΩ

Voltage VDSS700V, conduction resistance Rds0.9 ohms, charge Qg32.5nC, current ID12A

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced process is specifically designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher energy efficiency. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.

This PNP bipolar transistor is suitable for general purpose amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for low power surface mount applications.