Triode/MOS tube/transistor/module

This device is specifically designed as a single encapsulation solution for the dual switch requirements in cell phones and other ultra-portable applications. It features two independent N-channel MOSFETs with low on-resistance for lowest conduction losses. The MicroFET 1.6x1.6 thin encapsulation provides excellent thermal performance for its physical size and is ideal for switching and linear mode applications.

Collector-base reverse breakdown voltage 180V, collector-emitter reverse breakdown voltage 160V, collector current IC600mA

Configuration Dual Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -6.5 VGS(th)(v) -2 RDS(ON)(m?)@4.323V 46 Qg(nC) @4.5V 7.5 QgS(nC) 2.4 Qgd(nC) 3.5 Ciss(pF) 668 Coss(pF) 98 Crss(pF) 72

Type N VDSS(V) 100 ID@TC=91?C(A) 25 PD@TC=91?C(W) 34 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.71V -

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Dual N-channel, 30V, 5.8A, 0.04Ω@10V

N groove 500V 9A