Triode/MOS tube/transistor/module

This N-channel power MOSFET is produced using ON Semiconductor's trench technology, which is specially designed to minimize gate charge and achieve ultra-low on-resistance. This device is suitable for drone or laptop applications.

N-channel, 150V, 51A, 32mΩ@10V

N-channel, 20V, 6A, 0.039Ω@4.5V P-channel, -20V, -6A, 0.072Ω@-4.5V

N-channel, 30V, 5.2A, 29mΩ@10V

Type P VDSS(V) 60 VGS(V) 20 VTH(V) 1 IDS40°C(A) 3 RDS(Max) 160 PD40°C(W) 1.25

NPN

VO=50V;IO=100mA NPN built-in bias resistor