Triode/MOS tube/transistor/module

These N-channel MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

These N-channel MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 12 VGS(th)(v) 1.5 RDS(ON)(m?)@4.219V 85 Qg(nC)@4.5V - QgS(nC) 2.8 Qgd(nC) 3.5 Ciss(pF) 780 Coss(pF) 45 Crss(pF) 30

Automotive power MOSFETs for low power applications. 60V, 115mA, 7.5 Ω, single N-channel, SOT-23. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

MOSFET Type N Drain-Source Voltage (Vdss) (V) 40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 4.2/5.5 Continuous Drain Current ID (A) 80

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 250mW 100~300 NPN

N-channel, 500V, 8A

N-channel, 20V, 12A, 12mΩ@10V