Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 120A Power (Pd): 125W On-Resistance (RDS(on)@Vgs,Id): 2.1mΩ@10V,40A Threshold Voltage (Vgs(th)@Id): 2.5V@250uA Gate charge (Qg@Vgs): 73nC@10V Operating temperature: -55℃~+150℃@(Tj) BLDC (brushless motor) recommended material, Vds= 40V Id=120A Rds=2.1mΩ(2.9mΩ max)?TO-252encapsulation;

Darlington Transistor Array

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.

Type N VDSS(V) 20 VGS(V) 12 VTH(V) 0.4 IDS26°C(A) 6 RDS(Max) 48 PD26°C(W) 1.25

PNP

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -4.4 VGS(th)(v) -0.8 RDS(ON)(m?)@4.48V 50 Qg(nC) @4.5V 10.2 QgS(nC) 1.89 Qgd(nC) 3.1 Ciss(pF) 857 Coss(pF) 114 Crss(pF) 108