Triode/MOS tube/transistor/module

NPN, Vceo=160V, Ic=0.6A, hfe=200~300

N channel

MOS tube type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 2.2Ω@10V, 300mA

MOS tube type: N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 0.3A Power (Pd): 0.35W On-resistance (RDS(on)@Vgs,Id): 1.2mΩ@10V ,0.2A threshold voltage (Vgs(th)@Id): 0.8V-1.6V@250uA

N-channel, 100V, 80A, 15mΩ@45A, 10V

PNP -45V -100mA