Triode/MOS tube/transistor/module

Transistor type: 2 PNP Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 1W, collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 0.4V@50mA, 5mA, DC current gain (hFE@Ic, Vce): 100~300@10mA, 1V, characteristic frequency (fT): 300MHz, operating temperature: -55℃~+150℃@(Tj)

Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 2.2Ω@10V, 300mA

Double NPN, Vceo=80V, Ic=2A

Configuration Single Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 80 VGS(th)(v) 0.65 RDS(ON)(m?)@4.187V 2.8 Qg(nC)@4.5V 11.05 QgS(nC) 1.73 Qgd(nC) 3.1 Ciss(pF) 3200 Coss(pF) 460 Crss(pF) 446