Triode/MOS tube/transistor/module

Type P VDSS(V) -60 ID@TC=71?C(A) -1.6 PD@TC=71?C(W) 1.5 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25?C VGS=4.51V 200

MMDT4401-F2-0000HF

N-channel, 40V, 90A, 2.4mΩ@10V

This dual PNP bipolar transistor features an ultra-small SOT-363 encapsulation for portable products. Their assembly yields a pair of devices that are highly matched across all parameters without the need for costly fine-tuning. Applications include current mirroring, differential sensing and balanced amplifiers, mixers, detectors and limiters.

N-channel, 600V, 10A, 0.65?@10V

30V, N-Channel NexFET MOSFET?, Single SON5x6, 2.6mΩ 8-VSON-CLIP -55 to 150

Type N Drain-Source Voltage (Vdss) 100 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) On-Resistance (mΩ) 16 Input Capacitance (Ciss) 1130 Reverse Transfer Capacitance Crss (pF) 60 Gate Charge (Qg) 30