Triode/MOS tube/transistor/module

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

N-channel, 500V, 20A, 270mΩ@10V

P-channel, -30V, -4.1A, 65mΩ@-10V

Darlington driver, 7 channels (7-ch)

NPN, Vceo=50V, Ic=2A

Type: N-Channel Drain-Source Voltage (Vdss): 150V Continuous Drain Current (Id): 8.2A Power (Pd): 39W On-Resistance (RDS(on)@Vgs,Id): 245mΩ@10V,4A Threshold Voltage (Vgs(th)@Id): 1.75V@250uA Gate Charge (Qg@Vgs): 8.2nC@10V Input Capacitance (Ciss@Vds): 0.45nF@75V Operating Temperature: -55℃~+150℃@( Tj);