onsemi (Ansemi)

TO-92-3

bagged

10000

This N-channel enhancement mode MOSFET is produced using a patented high cell density DMOS technology. This product minimizes on-resistance while providing robust, reliable and fast switching performance. It can be used in most applications requiring up to 500 mA DC. These products are especially suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.