onsemi (Ansemi)

SOT-323-6L

taping

3000

These N and P channel logic level enhancement mode field effect transistors are produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. This device is designed to replace bipolar digital transistors and small signal MOSFETs in low voltage applications. Because no bias resistor is required, these dual digital FETs can replace several digital transistors with various bias resistor values.