onsemi (Ansemi)

TO-247-3

Tube

30

This Insulated Gate Bipolar Transistor (IGBT) utilizes a durable and cost-effective Super Field Stop Trench structure to provide excellent performance in demanding switching applications, along with low on-state voltage and lowest switching losses. The IGBT is ideal for UPS and solar applications. The device combines a soft and fast co-encapsulation freewheeling diode with low forward voltage.