LGE (Lu Guang)

TO-247-2

Tube

30

Diode configuration: Independent DC reverse withstand voltage (Vr): 650V Average rectified current (Io): 20A Forward voltage drop (Vf): 1.5V@20Adiode configuration: Independent DC reverse withstand voltage (Vr): 650V average Rectified current (Io): 25A Forward voltage drop (Vf): 1.5V@20A \n Silicon carbide (SiC) Schottky diode uses new technology, which can provide excellent switching performance and has higher reliability than silicon. No reverse recovery current, temperature independent switching characteristics and excellent thermal performance of Silicon carbide