onsemi (Ansemi)
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NSS20101JT1G NPN 20V 1A 20 V, 1.0 A, low saturation voltage, NPN bipolar transistor

NSS20101JT1G

NPN 20V 1A 20 V, 1.0 A, low saturation voltage, NPN bipolar transistor
部品番号
NSS20101JT1G
カテゴリー
Triode/MOS Tube/Transistor > Triode(BJT)
メーカー/ブランド
onsemi (Ansemi)
カプセル化
SC-89-3
パッキング
taping
パッケージの数
3000
説明
ON Semiconductor's e2PowerEdge series of low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control. Typical applications are DC-DC converters and power management in portable and battery-operated products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor control in mass storage products such as disk drives and tape drives. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
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在庫あり 73523 PCS
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