onsemi (Ansemi)
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NSV60100DMTWTBG 2 x PNP 60V 1A Dual 60 V, 1 A, low VCE(sat) PNP bipolar transistors, WDFN6 encapsulation

NSV60100DMTWTBG

2 x PNP 60V 1A Dual 60 V, 1 A, low VCE(sat) PNP bipolar transistors, WDFN6 encapsulation
部品番号
NSV60100DMTWTBG
カテゴリー
Triode/MOS Tube/Transistor > Triode(BJT)
メーカー/ブランド
onsemi (Ansemi)
カプセル化
W-DFN-6-EP(2x2)
パッキング
taping
パッケージの数
3000
説明
ON Semiconductor's e2PowerEdge series of low VCE(sat) bipolar transistors feature ultra-low saturation voltage VCE(sat) and high current gain capability in a small 2x2 mm plastic leadless encapsulation. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
リクエスト引用
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在庫あり 55532 PCS
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