onsemi (Ansemi)

TO-220AB-3

Tube

50

These devices are N-channel enhancement-mode silicon-gate field-effect transistors designed for logic-level (5V) drive power in applications such as programmable controllers, automotive switches, and electromagnetic drives. This performance is achieved through a special gate oxide design that provides full rated conduction at gate bias in the 3V to 5V range, thus enabling true switching power supply control directly in the logic circuit supply voltage. The previous development model was TA09526.