onsemi (Ansemi)

SMA

taping

5000

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. The Schottky diode is suitable for low voltage, high frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.