Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 120A Power (Pd): 105W On-Resistance (RDS(on)@Vgs,Id): 2.7mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Gate Charge (Qg@Vgs): 20nC@10V Input Capacitance (Ciss@Vds): 3nF@15V Operating Temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

-35A -100V

N+P channel, 30V, 8A, 18mΩ@10V; -30V, -8A, 32mΩ@-10V