Triode/MOS tube/transistor/module

Field Effect Transistor (MOSFET) Type: N-channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 72A Power (Pd): 54W On-resistance (RDS(on)@Vgs,Id: 4.3mΩ@ 10V, 20A Threshold Voltage (Vgs(th)@Id): 1.6@250uA Gate Charge (Qg@Vgs) 33nC@10V Input Capacitance (Ciss@Vds): 1.7nF@30V , Vds=60v Id=72A Rds=4.3 mΩ, working temperature: -55℃~+150℃@(Tj)

This Insulated Gate Bipolar Transistor (IGBT) utilizes a durable and cost-effective Super Field Stop Trench structure to provide excellent performance in demanding switching applications, along with low on-state voltage and lowest switching losses. The IGBT is ideal for UPS and solar applications. The device combines a soft and fast co-encapsulation freewheeling diode with low forward voltage.

P channel

Configuration Dual Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 5.3 VGS(th)(v) 0.7 RDS(ON)(m?)@4.116V 32 Qg(nC)@4.5V 8.3 QgS(nC) 1.4 Qgd(nC) 2.2 Ciss(pF) 625 Coss(pF) 69 Crss(pF) 61

DTC143ZE-F2-0000HF

Small Signal MOSFET, 60 V, 310mA, Single N-Channel, SOT-23

N channel