Triode/MOS tube/transistor/module

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BSS138W-F2-0000HF

P-channel, -30V, -12A, 0.020Ω@-10V

These N-channel 100V specified MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. Suitable for applications where more expensive SO-8 and TSSOP-8 encapsulations are not possible, these devices offer superior power dissipation in a very small footprint.

This N-Channel Power MOSFET is produced using ON Semiconductor's trench technology, which is specially designed to minimize gate charge and achieve ultra-low on-resistance. This device is suitable for notebook computer applications.

PNP Vceo=-180V Ic=-2A PC=20W

PNP 40V 4A

PNP, Vceo=-25V, Ic=-600mA, hfe=160~400