Triode/MOS tube/transistor/module

NPN,Vceo=40V,Ic=600mA

40V 140A 1.4 milliohm N-channel MOS

This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

N-channel, 60V, 5A, 35mΩ@10V

MOS, TO-220, N-channel, 120V, 120A, 5.8mΩ (Max), 250W

N-Channel 100V 0.2A 1.0W

MOSFET Type N Drain-Source Voltage (Vdss) (V) 100 Threshold Voltage VGS ±20 Vth(V) 1.2-2.5 On-Resistance RDS(ON) (mΩ) 7.5/9.5 Continuous Drain Current ID (A) 60

Gear: 10-40

N channel