Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -45 VGS(th)(v) -1.6 RDS(ON)(m?)@4.429V 52 Qg(nC) @4.5V 4.1 QgS(nC) 4.9 Qgd(nC) 5.6 Ciss(pF) 1914 Coss(pF) 158 Crss(pF) 116

P-channel, -30V, -11.6A, 11mΩ@-10V

NPN, Vceo=160V, Ic=300mA

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

N-channel, 30V, 14A, 9mΩ@10V