Triode/MOS tube/transistor/module

P-channel, VDSS withstand voltage 60V, ID current 2A, RDON on-resistance 160mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.4-2.6V,

Applications: communication modules, industrial control, artificial intelligence, consumer electronics

NPN, Vceo=50V, Ic=5A

Suitable for low voltage high speed switching applications in power supplies, converters, power motor control and bridge circuits.

1. 500mA collector output current (single channel); 2. High voltage resistance (50V); 3. Input compatible with TTL/CMOS logic signals; 4. Widely used in relay drive; 5. Electrostatic capacity: 2000V (HBM)

N-channel, 100V, 17A, 90mΩ@10V

PNP, Vceo=-65V, Ic=-100mA, hfe=220~475

Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 30V, ID current 4.2A, RDON on-resistance 49mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.7-1.3V,