Triode/MOS tube/transistor/module

N-channel, 30V, 8.5A (Ta)

This PNP bipolar transistor is suitable for general purpose amplifier applications. The device is housed in a SOT-223 encapsulation and is suitable for low power surface mount applications.

PNP, Vceo=-65V, Ic=-0.1A, hfe=220~475, silk screen 3B

Type N VDSS(V) 40 VGS(V) 20 VTH(V) 1 IDS85°C(A) 35 RDS(Max) 15 PD85°C(W) -

P-channel, -30V, -7.4A, 0.018Ω@-10V

This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.

PNP -50V -150mA

MOSFET N-CH

MOSFET N-CH