Triode/MOS tube/transistor/module
NIKO-SEM (Nickerson)
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TECH PUBLIC (Taizhou)
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HXY MOSFET (Huaxuanyang Electronics)
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N-channel, VDSS withstand voltage 60V, ID current 2.5A, RDON on-resistance 160mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.0V,
説明
This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.
説明
N-channel, 30V, 1A, 8Ω@4V
説明
Automotive power MOSFETs for compact and energy efficient designs with 5x6mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.
説明
DIODES (US and Taiwan)
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NPN, Vo=50V, Io=0.1A, PD=0.1W, R1=47K, R2=47K
説明
Convert Semiconductor
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The original factory changed the model, and the performance is exactly the same. The corresponding old model is: AO3414
説明
RealChip (Shenxin Semiconductor)
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