Triode/MOS tube/transistor/module

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Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 100mA Power (Pd): 125mW

NPN 100mA 50V

YJS4447B-F2-0000HF

N-channel, 600V, 4.5A, 2.5Ω

Silicon carbide MOS1200V80mΩ

UniFETTM II MOSFETs are a family of high voltage MOSFETs based on advanced planar stripe and DMOS technologies. This advanced MOSFET family has the lowest on-resistance among planar MOSFETs while providing excellent switching performance and higher avalanche energy strength. In addition, internal gate supply ESD diodes allow the UniFET II MOSFETs to withstand HBM surge stress above 2kV. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.