Triode/MOS tube/transistor/module

N-channel, 300V, 11.5A, 0.42Ω@10V

Sensitive thyristor IGT binning AC 20—25uA

PNP

N channel

N channel

Type: P-channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 60A Power (Pd): 30W On-resistance (RDS(on)@Vgs, Id: 11mΩ@10V, 12A Threshold voltage (Vgs (th)@Id): -1.7V@250uA Gate charge (Qg@Vgs): 72nC@10V Input capacitance (Ciss@Vds): 2.66nF@20V, Vds=40v Id=60A Rds=11mΩ, operating temperature: -55℃~+150℃@(Tj)

Type: P-channel Drain-source voltage (Vdss): 40V Continuous drain current (Id): 60A Power (Pd): 30W On-resistance (RDS(on)@Vgs, Id: 11mΩ@10V, 12A Threshold voltage (Vgs (th)@Id): -1.7V@250uA Gate charge (Qg@Vgs): 72nC@10V Input capacitance (Ciss@Vds): 2.66nF@20V, Vds=40v Id=60A Rds=11mΩ, operating temperature: -55℃~+150℃@(Tj)

N-channel 60V 16A