Triode/MOS tube/transistor/module

This P-channel MOSFET is a rugged gate version of the advanced PowerTrench process. It is optimized for power management applications requiring wide gate drive voltage ratings (4.5V – 20V).

Pre-biased Two NPN 65V 100mA

P channel -12V -4.1A

NPN, Vceo=120V, Ic=2A, hfe=120~270

PNP, Vceo=-60V, IC=-600mA, PD=0.35W

PNP, Vceo=-150V, Ic=-0.6A, hfe=100~150

Type N Drain-Source Voltage (Vdss) 100 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 7.2 On-Resistance (mΩ) 13.5 Input Capacitance (Ciss) 1440 Reverse Transfer Capacitance Crss (pF) 30 Gate Charge (Qg ) 28

N-Channel MOSFET, Small Signal, 60V, 310mA, 2.5 Ω Trench, N-Channel, SOT23