Triode/MOS tube/transistor/module

N-channel, 220V, 18A, 150mΩ@10V

PNP, Vceo=-20V, Ic=-500mA, hfe=144~202

N channel

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 15.5 VGS(th)(v) 1.8 RDS(ON)(m?)@4.273V 11 Qg(nC)@4.5V 20 QgS(nC) 3.9 Qgd(nC) 3 Ciss(pF) 1125 Coss(pF) 132 Crss(pF) 70

P-channel, -30V, -5.8A, 38mΩ@10V

Type N VDSS(V) 650 ID@TC=99?C(A) 10 PD@TC=99?C(W) 50 VGS(V) ±30 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.79V -

P groove -30V -13.1A

BC858BW-F2-0000HF