Triode/MOS tube/transistor/module

P-channel, -30V, -65A, 9mΩ@10V

CSD87588N Synchronous Buck NexFET Power Block II

N channel

N-channel, 55V, 47A, 22mΩ@10V

N-channel 40V 2.3mΩ@4.5V

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 300mV@100mA, HFE: 200-400

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SUPERFET III MOSFETs are ideal for switching power supply applications such as server/telecom power supplies, adapters, and solar inverter applications. The Power88 encapsulation is an ultra-thin surface mount encapsulation (1mm high) with a small size and footprint (8 * 8 mm2). The SUPERFET III MOSFETs within the Power88 encapsulation provide superior switching performance with lower parasitic power supply inductance and separated power and drive sources. The Power88 offers Moisture Sensitivity Level 1 (MSL 1).

Drain-source voltage (Vdss): -20V Continuous drain current (Id): -0.8A Power (Pd): 0.15W On-resistance (RDS(on)@Vgs,Id): 290mΩ@4.5V,0.8A