Triode/MOS tube/transistor/module

PNP, Vceo=-40V, Ic=-0.2A, hfe=100~300, silk screen 2A

N-channel, 600V, 2A, 4.2Ω@10V

P-channel, -20V, -3A, 64 milliohms.

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 100mA Power (Pd): 350mW On-Resistance (RDS(on)@Vgs,Id): 8Ω@4V, 10mA Threshold Voltage ( Vgs(th)@Id): 1.5V@100uA N-channel, 30V, 0.1A, 8Ω@4V

P-channel, -20V, -8A, 16mΩ@-4.5V

NPN, Vceo=300V, Ic=500mA, hfe=40~

PNP, Vceo=-45V, Ic=-800mA, hfe=160~400