Triode/MOS tube/transistor/module

IC(A) 0.6 VCEO(V) 160 hFE(β) 100-300 fT(MHZ) 300 VCBO(V) 180 VCE(sat)(W) 0.15 Type NPN

N-channel, 950V 8A

N-channel, 60V, 28A, 25mΩ@10V

Type PNP IC(A) -3 VCBO(V) -60 VCEO(V) -60 VEBO(V) -7 VCE(sat)(V) -0.3

Intelligent Power Module

This high voltage PNP bipolar transistor is suitable for general switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.