Triode/MOS tube/transistor/module

This N-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.

P-channel, -12V, -16A, 5mΩ@-4.5V

N-channel, 600V, 7.1A

Enhanced MOSFET_P+P_Dual -Channel_-20V_-4.5A_7.8W

Configuration Single Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -40 VGS(th)(v) -1.5 RDS(ON)(m?)@4.424V 18.5 Qg(nC) @4.5V - QgS(nC) 6.9 Qgd(nC) 9.7 Ciss(pF) 2960 Coss(pF) 370 Crss(pF) 310

Dual N-channel, 30V, 3.5A, 0.1Ω@10V

This device is intended primarily for low-level audio and general-purpose applications with high-impedance sources. From Process 52.

This device is intended primarily for low-level audio and general-purpose applications with high-impedance sources. From Process 52.