Triode/MOS tube/transistor/module

SMD transistor type: NPN Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 100mA Power (Pd): 200mW Collector cut-off current (Icbo): 0.1uA DC current gain (hFE@Ic, Vce): 200@100mA, 0.5V Operating temperature: -55℃~+150℃@(Tj)

NPN,Vceo=40V,Ic=600mA

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

This high voltage NPN bipolar transistor is a spin-off of our popular SOT-23 3-lead device. The device is suitable for general switching applications and comes in a SOT-723 surface mount encapsulation. The device is suitable for low power surface mount applications where board space is at a premium.

Type P VDSS(V) 20 VGS(V) 12 VTH(V) 0.3 IDS52°C(A) 10 RDS(Max) 30 PD52°C(W) 2.8