Triode/MOS tube/transistor/module

PNP 200W -90V- 20A Applications: Designed for high voltage and high power amplifier applications

Semiconductor transistor field effect transistor MOS tube, TO-252, N channel, withstand voltage: 100V, current: 10A, 10V internal resistance (Max): 0.128Ω, 4.5V internal resistance (Max): .14Ω, power: 40W

NPN, Vceo=30V, Ic=2A

Configuration N+P Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 15 VGS(th)(v) 1.8 RDS(ON)(m?)@4.259V 110 Qg(nC)@ 4.5V - QgS(nC) 2.5 Qgd(nC) 3.3 Ciss(pF) 450 Coss(pF) 31 Crss(pF) 15