Triode/MOS tube/transistor/module

N-channel, 250V, 46A, 38mΩ@10V

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PNP, 50V, 0.5A, SOT23

N-channel 30V 3.6A

MOS field effect tube

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N-channel 100V 2A, 210 milliohms, larger current than BSS123.

This N-channel MOSFET is designed to increase the overall energy efficiency and minimize the switching node noise of DC/DC converters, and can be used with synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.