Triode/MOS tube/transistor/module

MMBTA55-F2-0000HF

N-channel, Vce=1200V, Ic=75A

N-channel, 25V, 0.68A, 450mΩ@4.5V; high current version of FDV301N

P-channel, 250V, 190mA, 12Ω@10V

This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

NPN, Vceo=50V, Ic=150mA, hfe=200~400

N groove 40V 195A

N-channel, 100V, 53A, 16.5mΩ@10V

This is a complementary 20 V small signal MOSFET in a 1.0 x 1.0 mm SOT-963 encapsulation.