Triode/MOS tube/transistor/module

digital triode

NPN, Vceo=45V, Ic=500mA, hfe=160~400

N-channel, 30V, ±100mA, 5Ω@4V

P-channel, -30V, -5.6A, 46mΩ@-10V

80V 6.3mR＜

Polarity PNP Power Dissipation (W) 0.3 Maximum Collector Current (mA) 500 Collector- Base Voltage (V) 40 Saturation Voltage Drop (V) 0.6 Collector/ Base Current (mA) 500/50 Maximum operating frequency (MHz) 150

This N-channel MOSFET is specifically designed to increase the overall energy efficiency and minimize the switching node noise of DC/DC converters, either synchronously or conventionally switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.