Triode/MOS tube/transistor/module

PNP Vceo=-30V Ic=-500mA

DTC143ZUA-F2-0000HF

This N-channel MOSFET is produced using an advanced Power Trench process optimized for rDS(on), switching performance and robustness.

1. 500mA collector output current (single channel); 2, high voltage resistance (50V); 3, input compatible with TTL/CMOS logic signal; 4, widely used in relay drive; 5, ULN2003D built-in 4K pull-down to ground resistance

Field Effect Transistor (MOSFET) Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 300mA Power (Pd): 350mW On-Resistance (RDS(on)@Vgs,Id): 2Ω@ 10V,0.3A